Ckfinder Licence Key 18
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The present invention relates to a method of producing a semiconductor substrate used for a semiconductor device.
A semiconductor substrate (semiconductor wafer) used for a semiconductor device such as integrated circuit (IC) and a power device is made of, for example, silicon single crystal, silicon nitride single crystal, or silicon carbide single crystal. To improve the properties of the substrate, the impurity is introduced in the semiconductor substrate to change the characteristics of the semiconductor material.
In the past, the semiconductor substrate is generally manufactured by (1) a single crystal manufacturing method and (2) a vapor phase epitaxial growth method.
In the single crystal manufacturing method, a polycrystalline semiconductor substrate obtained by a liquid phase growth method is subject to a finishing process such as grinding to prepare a semiconductor substrate, which is then cut into a desired size.
In the vapor phase epitaxial growth method, on the other hand, polycrystalline semiconductor is placed in a reaction tube such as quartz tube, and a growth of a monocrystalline semiconductor is carried out by reacting starting gas at a temperature of about 1,000.degree. C. to 1,100.degree. C. Since the starting gas is always mixed with inert gas (reactive gas) such as hydrogen, the reaction gas is diluted with inert gas such that the chemical vapor deposition (CVD) process can be carried out.
The semiconductor wafer manufactured by the single crystal manufacturing method has a few problems as follows.
(1) The single crystal manufacturing method requires a long time to prepare the semiconductor substrate, which is not suitable for mass production.
(2) The semiconductor substrate is not suitable for a large-sized device. The single crystal is small in diameter (6 inches), which is considered to be the limit of the semiconductor substrate.
(3) The single crystal is brittle, which makes handling of the single crystal and manufacturing processes difficult.
(4) The single crystal is expensive.
On the other hand, the semiconductor substrate manufactured by the vapor phase epitaxial growth method has a following problem.
(5) The semiconductor substrate manufactured by the vapor phase epitaxial growth
https://colab.research.google.com/drive/1UJuwx6P9cxBu7wqoziS386nNczliCUz_
https://colab.research.google.com/drive/18qQjb9GECdviN7p6TmUvwzOTKx6bi-QL
https://colab.research.google.com/drive/1ZkF5c0I9bBu1YT3apRHDSnqgTsMNPj9L
https://colab.research.google.com/drive/1XhOVWD7_VvdSWM6kjHJ55Lp-jDNUY_gC
https://colab.research.google.com/drive/1qQ3KbGbatKtQrhOZTp5HpVK6zNXiR1go
ckfinder licence key 18
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